Electric field control of nonvolatile four-state magnetization at room temperature.

نویسندگان

  • Sae Hwan Chun
  • Yi Sheng Chai
  • Byung-Gu Jeon
  • Hyung Joon Kim
  • Yoon Seok Oh
  • Ingyu Kim
  • Hanbit Kim
  • Byeong Jo Jeon
  • So Young Haam
  • Ju-Young Park
  • Suk Ho Lee
  • Jae-Ho Chung
  • Jae-Hoon Park
  • Kee Hoon Kim
چکیده

We find the realization of large converse magnetoelectric (ME) effects at room temperature in a magnetoelectric hexaferrite Ba0.52Sr2.48Co2Fe24O41 single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200 ps/m. The modulation of magnetization then reaches up to 0.62μ(B)/f.u. in an electric field of 1.14 MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure.

A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated...

متن کامل

Electric control of magnetism at room temperature

In the single-phase multiferroics, the coupling between electric polarization (P) and magnetization (M) would enable the magnetoelectric (ME) effect, namely M induced and modulated by E, and conversely P by H. Especially, the manipulation of magnetization by an electric field at room-temperature is of great importance in technological applications, such as new information storage technology, fo...

متن کامل

A multilevel nonvolatile magnetoelectric memory

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple s...

متن کامل

Nonvolatile electric-field control of magnetization in a Y-type hexaferrite

The magnetoelectric effects in multiferroic materials enable the mutual control of electric polarization by a magnetic field and magnetization by an electric field. Nonvolatile electric-field control of magnetization is extremely important for information storage applications, but has been rarely realized in single-phase multiferroic materials. Here we demonstrate the prominent direct and conve...

متن کامل

Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure

Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remai...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 108 17  شماره 

صفحات  -

تاریخ انتشار 2012